?2002 fairchild semiconductor corporation rev. b1, september 2002 ksc2383 npn epitaxial silicon transistor absolute maximum ratings t a =25 c unless otherwise noted electrical characteristics t a =25 c unless otherwise noted h fe classification symbol parameter ratings units v cbo collector-base voltage 160 v v ceo collector-emitter voltage 160 v v ebo emitter-base voltage 6 v i c collector current 1 a i b base current 0.5 a p c collector power dissipation 900 mw t j junction temperature 150 c t stg storage temperature -55 ~ 150 c symbol parameter test condition min. typ. max. units i cbo collector cut-off current v cb =150v, i e =0 1 a i ebo emitter cut-off current v eb =6v, i c =0 1 a bv ceo collector-emitter breakdown voltage i c =10ma, i b =0 160 v h fe dc current gain v ce =5v, i c =200ma 60 320 v ce (sat) collector-emitter saturation voltage i c =500ma, i b =50ma 1.5 v v be (on) base-emitter on voltage v ce =5v, i c =5ma 0.45 0.75 v f t current gain bandwidth product v ce =5v, i c =200ma 20 100 mhz c ob output capacitance v cb =10v, i e =0, f=1mhz 20 pf classification r o y h fe 60 ~ 120 100 ~ 200 160 ~ 320 ksc2383 color tv audio output & color tv vertical deflection output to-92l 1 1. emitter 2. collector 3. base
?2002 fairchild semiconductor corporation ksc2383 rev. b1, september 2002 typical characteristics figure 1. static characteristic figure 2. dc current gain figure 3. dc current gain figure 4. collector-emitter saturation voltage figure 5. base-emitter on voltage figure 6. collector output capacitance 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i b = 10ma emitter common t a =25 o c i b = 0.5ma i b = 1ma i b = 15ma i b = 6ma i b = 4ma i b = 3ma i b = 2.5ma i b = 2ma i b = 1.5ma ic[ma], collector current v ce [v], collector-emitter voltage 10 100 1000 1 10 100 1000 v ce =5v v ce =10v emitter common h fe , dc current gain i c [ma], collector current 100 1000 10 100 1000 v ce =1v v ce =5v v ce =10v emitter common t a = 25 o c h fe , dc current gain i c [ma], collector current 1 10 100 1000 1e-3 0.01 0.1 1 i c /i b =5 emitter common t a = 25 o c i c /i b =10 v be (sat), v ce (sat)[v], saturation voltage i c [ma], collector current 0.0 0.2 0.4 0.6 0.8 1.0 0.0 0.2 0.4 0.6 0.8 1.0 emitter common i c /i b =10 i c [a], collector current v be [v], base-emitter voltage 1 10 100 1000 1 10 100 1000 emitter common f = 1mhz t a = 25 o c c ob [pf], capacitance v cb [v], collector base voltage
?2002 fairchild semiconductor corporation ksc2383 rev. b1, september 2002 typical characteristics (continued) figure 7. current gain bandwidth product figure 8. safe operating area 1 10 100 1000 1 10 100 1000 emitter common t a = 25 o c f t [mhz], current gain bandwidth product i c [ma], collector current 1 10 100 1000 1e-3 0.01 0.1 1 10 v ceo max. dc t a =25 o c i c max.=1a 100ms 10ms i c max. (pulse) 1ms i c [a], collector current v ce [v], collector-emitter voltage
package dimensions ksc2383 4.90 0.20 0.50 0.10 1.27typ [1.27 0.20 ] 0.45 0.10 0.45 0.10 0.80 0.10 0.70max. 1.00max. 2.54 typ 8.00 0.20 1.70 0.20 1.00 0.10 13.50 0.40 3.90 0.20 3.90 0.20 1.45 0.20 to-92l dimensions in millimeters ?2002 fairchild semiconductor corporation rev. b1, september 2002
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